1 Features
• Universal: dual low-side, dual high-side or
halfbridge driver
• Junction temperature range –40 to +150°C
• Up to 4A peak source and 6A peak sink output
• Common-mode transient immunity (CMTI) greater
than 125V/ns
• Up to 25V VDD output drive supply
– 5V, 8V, 12V VDD UVLO options
• Switching parameters:
– 33ns typical propagation delay
– 5ns maximum pulse-width distortion
– 10μs maximum VDD power-up delay
• UVLO protection for all power supplies
• Fast disable for power sequencing
2 Applications
• On-board battery chargers
• High-voltage DC-DC converters
• Automotive HVAC, body electronics
3 Description
The UCC21330 is an isolated dual channel gate
driver family with programmable dead time and wide
temperature range. It is designed with 4A peak-source
and 6A peak-sink current to drive power MOSFET,
SiC, GaN, and IGBT transistors.
The UCC21330 can be configured as two low-side
drivers, two high-side drivers, or a half-bridge driver.
The input side is isolated from the two output drivers
by a 3kVRMS isolation barrier, with a minimum of
125V/ns common-mode transient immunity (CMTI).
Protection features include: resistor programmable
dead time, disable feature to shut down both outputs
simultaneously, and integrated de-glitch filter that
rejects input transients shorter than 5ns. All supplies
have UVLO protection.
With all these advanced features, the UCC21330
device enables high efficiency, high power density,
and robustness in a wide variety of power
applications.
TI
20000
NA
TI
12369
SOIC-16-300mil
TI(德州仪器)
8000
TI/德州仪器
2500
SOIC16
TI
20000
SOP16
TI
12000
SOP16
TI
12421
SOIC-16-300mil
TI
5000
NA
TI
80000
SOIC-16
TI(德州仪器)
9850
SMD
TI/德州仪器
9000
SOP16
TI(德州仪器)
32000
SOIC-16
TEXAS INSTRUMENTS
1
TI-德州仪器
6328
SOIC-16
TI
11000
SOIC-16