STD11NM60N-1
ST-意法半导体
78800
TO-251-3
24+25+/26+27+
一一有问必回一特殊渠道一有长期订货一备货HK仓库
STD11NM60N-1
ST
3
07+
24+
原装现货假一罚十
STD11NM60N-1
ST
32500
TO-252/D-PAK
1709+
普通
STD11NM60N-1
ST/意法
99856
IPAKTO-251
22+
STD11NM60N-1
ST
37650
IPAKTO-251
25+
独立分销商 公司只做原装 诚心经营 免费试样正品保证
STD11NM60N-1
STMICROELECTRONICS
意法半导体集团
N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET
STD11NM60N-1
STMICROELECTRONICS
意法半导体集团
N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET
STD11NM60N-1
STMICROELECTRONICS
意法半导体集团
N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET
STC8H1K16-36I-LQFP32STC8G1K08-38I-SOP16STC8A8K64D4-45I-LQFP48STC8G2K64S4-36I-LQFP48
发布时间:2023-06-05STC8H1K16-36I-LQFP32STC8G1K08-38I-SOP16STC8A8K64D4-45I-LQFP48STC8G2K64S4-36I-LQFP48
发布时间:2023-06-05製造商:STMicroelectronics 產品類型:MOSFET 技術:Si 安裝風格:SMD/SMT 封裝/外殼:TO-252-3 晶體管極性:N-Channel 通道數:1Channel Vds-漏-源擊穿電壓:100V Id-C連續漏極電流:25A RdsOn-漏-源電阻:35mOhms Vgs-閘極-源極電壓:-20V,+20V Vgsth-門源門限電壓:4.5V
发布时间:2021-06-09