Description
The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53 efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability.
• INTERNALLY MATCHED
• Performance at 960 MHz, 26 Volts
- Output Power = 85 Watts
- Power Gain = 16 dB Typ
- Efficiency = 53 Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• 100 Lot Traceability
PTF10160
INFINEON/英飞凌
6992
SMD
PTF10160
INFINEON
350
高频管
PTF10160
INFINEON
20000
高频
PTF10160
INFINEON
20000
MODL
PTF10160
INFINEON/英飞凌
32
SMD
PTF10160
INFINEO
80000
高频
PTF10160
INFINEON/英飞凌
18000
PTF10160
INFINEON/英飞凌
8000
PTF10160
INFINEON/英飞凌
98192
PTF10160
ERICSSON
9630
TO-63
PTF10160
ERICSSON
90000
TO-63
PTF10160
INFINEON
8500
高频
PTF10160
INFINEON
350
高频
PTF10160
ERICSSON/爱立信
8510
TO-59
PTF10160
Infineon(英飞凌)
7000
标准封装