Description
The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz range. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
• INTERNALLY MATCHED
• Performance at 960 MHz, 28 Volts
- Output Power = 70 Watts
- Power Gain = 14.5 dB Typ
- Efficiency = 50 Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• 100 Lot Traceability
PTF10019
INFINEON
7936
原厂封装
PTF10019
INFINEON
20151
0
PTF10019
INFINEON
8500
/
PTF10019
PEAK
8510
TO-59
PTF10019
INFINEON
6200
0
PTF10019
3000
PTF10019
ERICSSON
800
PTF10019
INFINEON
20000
/
PTF10019
Infineon
9800
原厂封装
PTF10019
INFINEON
413
/
PTF10019
INFINEON
413
/
PTF10019
ERICSSON
1080
TO-63
PTF10019
Infineon(英飞凌)
413
/
PTF10019
INFINEON
350
高频管
PTF10019
ERICSSON
9630
TO-63