General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where fast switching, low in-line power loss, and resistance to transients are needed.

Features

■ 7.6 A, 30 V. RDS(ON) = 0.017 Ω @ VGS = 10 V

RDS(ON) = 0.025 Ω @ VGS = 4.5 V.

■ High density cell design for extremely low RDS(ON).

■ Proprietary SuperSOTTM-8 small outline surface mount package with high power and current handling capability.