Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits.
• Low RDs(on)
• VGS Rated at ± 20V
• Silicon Gate for Fast Switching Speeds
• IDSS. VDs(on), SOA and VQS(ih) Specified at Elevated Temperature
• Rugged
• Low Drive Requirements
• Ease of Paralleling
IRF323
IR
19889
TO-3(铁帽)
IRF323
Harris
100
IRF323
IR/MOT
67500
TO-3
IRF323
IR/MOT
67500
TO-3
IRF323
IR
8630
CAN
IRF323
IR
10000
TO-3
IRF323
IR
48478
TO-3
IRF323
VISHAY-威世
9328
车规-晶体管
IRF323
IR
8000
TO-3
IRF323
IR
7000
TO-3
IRF323
IR
6000
TO-3