Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.

Features

• RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A

• Low gate charge ( Typ. 21nC)

• Low Crss ( Typ. 11pF)

• Fast switching

• 100 avalanche tested

• Improve dv/dt capability

• RoHS compliant

参考价格：3.9850

型号：FDB12N50FTM_WS 品牌：Fairchild 说明：FDB12N50FTM_WS多少钱，2026年最近一个月行情走势，FDB12N50FTM_WS批发/采购报价，FDB12N50FTM_WS行情走势销售排行榜，FDB12N50FTM_WS报价。