Description

The CMPA901A035F1 is a gallium nitride (GaN) monolithic microwave integrated

circuit (MMIC) on a silicon carbide (SiC) substrate. The device provides 35 watts

of output power across the band from 9 to 11 GHz. The GaN HEMT MMIC is fully

matched to 50 Ohm, is housed in a compact, 6-lead metal/ceramic flanged

package (Type: 440219) and offers high power, high gain and superior efficiency.

The CMPA901A035F1 is suitable for long pulse operation and capable of CW

operation.

Features

• 35 W Typical PSAT

• >38 Typical Power Added Efficiency

• 35 dB Large Signal Gain

• High Temperature Operation

Note: Features are typical performance across

frequency under 25°C operation. Please reference

performance charts for additional details.

Applications

• Civil and Military Pulsed

Radar Amplifiers