DESCRIPTION

VSLB4940 is a high speed infrared emitting diode in GaAlAs,

MQW technology, molded in a clear plastic package.

FEATURES

• Package type: leaded

• Package form: T-1, clear epoxy

• Dimensions: Ø 3 mm

• High speed

• High radiant power

• Low forward voltage

• Suitable for high pulse current operation

• Angle of half intensity: ϕ = ± 22°

• Peak wavelength: λp = 940 nm

• Good spectral matching to Si photodetectors

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912