VND830MSPTR-E
ST/意法
100000
PowerSO-10
VND830MSPTR-E
STM/意法
700000
PowerSO-10
VND830MSPTR-E
3000
NA
VND830MSPTR-E
ST
65790
na
VND830MSPTR-E
ST
396379
PowerSO-10
VND830MSPTR-E
意法半导体
500000
NA
VND830MSPTR-E
STMicroelectronics
66800
10-PowerSO
VND830MSPTR-E
STM/意法
600
PowerSO-10
VND830MSPTR-E
STMicroelectronics
5058
ICDVRHIGHSIDE2CH6APWRSO1
VND830MSPTR-E
ST-意法半导体
78800
SOP-10
VND830MSPTR-E
ST
35200
VND830MSPTR-E
STMicroelectronics
36500
10-PowerSO
VND830MSPTR-E
STM
6863
原厂封装
VND830MSPTR-E
STM
6863
原厂封装
VND830MSPTR-E
STMicroelectronics
65500
10-PowerSO