DESCRIPTION
The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.
FEATURES
• Low noise
Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA
Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• High gain
Q1 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA
Q2 : |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• Flat-lead 6-pin thin-type ultra super minimold package
• Built-in 2 different transistors (2SC5010, 2SC5006)
NEC-日本电气
78800
SOT-363
RENESAS-瑞萨
57500
SOT-363
NEC
6000
SOT363
NEC
37467
SOT463
NEC
54000
SOT363
SOT-563
15659
NA
NEC
3000
SMD
NEC
6200
QPN
NEC
8293
SOT666
NEC
9850
SOT23-6
NEC
4500
SOT23-6
NEC
5
DIP
NEC
8850
SOT23-6
NEC
80000
SOT-363
NEC
10000
QPN