Features
• Integrated driver, active diode, high-side MOSFET and low-side MOSFET
• Input voltage range of 4.25 V to 16 V
• VCC supply of 4.25 V to 5.5 V
• Output voltage range from 0.225 V up to 5.5 V
• Output current capability of 20 A
• Operation up to 1.5 MHz
• VCC under voltage lockout (UVLO)
• Bootstrap under voltage protection
• On-chip MOSFET current sensing and reporting with 5 μA/A gain
• Over temperature protection and thermal shutdown
• Cycle-by-cycle over current protection and flag
• High-side MOSFET short detection and flag
• Auto-replenishment on bootstrap capacitor
• Compatible with 3.3 V tri-state PWM Input
• Auto SLEEP mode after 20 μs of PWM Tri-state (1.7 mA typ)
• DEEP SLEEP mode for power saving via EN= low (32 μA typ)
• Small 4 mm x 5 mm x 0.9 mm PQFN package
• Lead free RoHS compliant package
TDA21520
Infineon(英飞凌)
21000
-
TDA21520
Infineon(英飞凌)
21000
-
TDA21520
Infineon(英飞凌)
21000
-
TDA21520
INFINEON
70000
N/A
TDA21520
Infineon(英飞凌)
21000
-
TDA21520
Infineon(英飞凌)
20948
-
TDA21520
INFINEON/英飞凌
9850
QFN
TDA21520
Infineon(英飞凌)
19850
-
TDA21520
INFINEON
6540
QFN
TDA21520
INFINEON/英飞凌
9000
PG-IQFN-25
TDA21520
IR
111
QFN
TDA21520
Infineon(英飞凌)
60000
NA
TDA21520
INFINEON
16500
QFN
TDA21520
INFINEON
16500
QFN
TDA21520
INFINEON
30000
SOP