Product Description

Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 5-2000 MHz cellular, ISM, WLL and narrowband PCS applications.

Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.

Product Features

• Patented High Reliability GaAs HBT Technology

• High Output 3rd Order Intercept : +41.5 dBm typ. at 1960 MHz

• Surface-Mountable Power Plastic Package

Applications

• PCS, Cellular Systems

• High Linearity IF Amplifiers