■DESCRIPTION
SMC2208E is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss needed in small outline surface mount package.
■FEATURES
VDS = 20V, ID = 0.8A
RDS(ON) =210mΩ(Typ.)@VGS = 4.5V
RDS(ON) =245mΩ(Typ.)@VGS = 2.5V
RDS(ON) =310mΩ(Typ.)@VGS = 1.8V
RDS(ON) =380mΩ(Typ.)@VGS = 1.5V
RDS(ON) =615mΩ(Typ.)@VGS = 1.2V
◆Fast switch
◆Low gate drive applications
◆Low Input Capacitance
■APPLICATIONS
◆Hend-Held Instruments
◆Load Switch
◆Battery Protection
SOP16
30000
10
Semitehelec
25836
SOT-23
SEMTRON
20000
SOT-23L
SEMTRON
11200
SOT-23L
Semitehelec
18000
SOT-23
SOP16
3500
10
Semitehelec
36800
SOT-23
SEMITEH ELEC
90000
Semitehelec
50000
SOT-23
XUNPU
100
SEMITEH ELEC
45000
SEMTRON
18800
SOT-23.贴片
Semitehelec
5000
SOT-23
Semitehelec
32606
SOT-23
SMC30J10A 封装DO-214AB-2 二极管TVS ST 批次22+ 电子元器件配单
发布时间:2023-07-04