General Description
The SLG59M1558V is designed for load switching
applications with ultra low quiescent current. The part comes
with one 28.5 mΩ, 1.0 A rated P-channel MOSFET controlled
by a single ON control pin. The product is packaged in an
ultra-small 1.0 mm x 1.0 mm package.
Features
• One 1.0 A MOSFET
• Ultra Low Quiescent Current
• Low RDSON
• 28.5 mΩ at VIN = 5.0 V
• 36.4 mΩ at VIN = 3.3 V
• 44.3 mΩ at VIN = 2.5 V
• 60.8 mΩ at VIN = 1.8 V
• 77.6 mΩ at VIN = 1.5 V
• VIN = 1.5 V to 5.5 V
• Pb-Free / Halogen-Free / RoHS compliant
• STDFN 4L, 1.0 x 1.0 x 0.55 mm
SILEGO
48255
QFN
SLG59M1558V
RENESAS/瑞萨
880000
QFN
SLG59M1558V
SILEGO
5000
QFN
SILEGO
29369
QFN
SILEGO
36218
DFN-4.贴片
Dialog Semiconductor
105000
STDFN-4(1x1)
SILEGO
20000
QFN
SLG59M1558V
Silego Technology
500000
封装
SLG59M1558V
SILEGO
8850
QFN
SILEGO
26800
QFN
SILEGO
31669
QFN
SILEGO
43600
QFN
SILEGO
41142
QFN
SILEGO
30000
QFN
75000
N/A
SLD130N04T是一款由ES(现为MapleSeMi)生产的N沟道增强型功率MOSFET,凭借其低导通电阻、快速开关特性和优化的电气参数,在高频率开关应用中表现出色。本文深入分析了该器件的关键性能指标,包括其在高频下的开关损耗、栅极电荷和导通电阻表现,并与SLD50N06T、IRFB3306等主
发布时间:2026-02-05