Product Description

Stanford Microdevices’ SHF-0186 is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity.

Product Features

• Patented AlGaAs/GaAs Heterostructure FET Technology

• +28 dBm P1dB Typical

• +40 dBm Output IP3 Typical

• High Drain Efficiency: Up to 46 at Class AB

• 17 dB Gain at 900 MHz (Application circuit)

• 15 dB Gain at 1900 MHz (Application circuit)

• Gmax Guaranteed at 12 GHz

Applications

• Analog and Digital Wireless System

• Cellular PCS, CDPD, Wireless Data, Pagers

• AN-020 Contains detailed application circuits