FEATURES:

• Rugged construction with poly silicon gate

• Low RDS(on) and high transconductance

• Excellent high temperature stability

• Very fast switching speed

• Fast recovery and superior dv/dt performance

• Increased reverse energy capability

• Low input and transfer capacitance for easy paralleling

• Hermetically sealed

• TX, TXV and Space Level Screening available

• Replaces: IRF9140 Types