RUC002N05HZGT116
ROHM
30000
RUC002N05HZGT116
ROHM(罗姆)
7350
SOT23(TO236)
RUC002N05HZGT116
Rohm(罗姆)
8735
NA/
RUC002N05HZGT116
ROHM/罗姆
80000
NA
RUC002N05HZGT116
ROHMSEMICONDUCTOR
3000
NA
RUC002N05HZGT116
ROHM(罗姆)
6000
SOT23
RUC002N05HZGT116
ROHM
12000
N/A
RUC002N05HZGT116
Rohm(罗姆)
20094
NA
RUC002N05HZGT116
ROHM/罗姆
5590
SST3(SOT-23-3)
RUC002N05HZGT116
ROHM/罗姆
6850
SST3(SOT-23-3)
RUC002N05HZGT116
ROHM
2540
SOT-23
RUC002N05HZGT116
ROHM
2000
SST3(SOT-23-3)
RUC002N05HZGT116
ROHM/罗姆
10000
SST3(SOT-23-3)
RUC002N05HZGT116
ROHM
110
SMD
RUC002N05HZGT116
ROHM-罗姆
36218
车规-元器件
RU8205G双N沟道(共漏)20V6ATSSOP-8场效应管(MOSFET) 双N沟道(共漏)漏源电压(Vdss):20V连续漏极电流(Id):6A功率(Pd):1.5W导通电阻(RDS(on)@Vgs,Id):21mΩ@4.5V,6A阈值电压(Vgs(th)@Id):700mV@250uA栅极电荷(Qg@Vgs):10nC@4.5V输入电容(Ciss@Vds):580pF@1
发布时间:2022-11-23