RU82566DM
INTEL/英特尔
18000
BGA
RU82566DM
INTEL
206
BGA
RU82566DM
INTEL/英特尔
1709
BGA
RU82566DM
INTEL/英特尔
6893
BGA
RU82566DM
INTEL
58
BGA
RU82566DM
INTEL/英特尔
18000
BGA
RU82566DM
INTEL
2568
BGA
RU82566DM
INTEL/英特尔
9850
BGA
RU82566DM
INTEL/英特尔
880000
BGA
RU82566DM
INTEL/英特尔
2366
BGA
RU82566DM
INTEL
12345
BGA
RU82566DM
INTEL
12245
BGA
RU82566DM
INTEL/英特尔
26800
BGA
RU82566DM
INTEL
68500
FCBGA
RU82566DM
INTEL
9800
原厂封装
RU8205G 双N沟道(共漏) 20V 6A TSSOP-8 场效应管(MOSFET) 双N沟道(共漏) 漏源电压(Vdss):20V 连续漏极电流(Id):6A 功率(Pd):1.5W 导通电阻(RDS(on)@Vgs,Id):21mΩ@4.5V,6A 阈值电压(Vgs(th)@Id):700mV@250uA 栅极电荷(Qg@Vgs):10nC@4.5V 输入电容(Ciss@Vds):580pF@1
发布时间:2022-11-23