RU82566DM
INTEL
23000
BGA
INTEL/英特尔
6000
BGA
RU82566DM
INTEL/英特尔
278
BGA
RU82566DM
INTEL/英特尔
37240
BGA
RU82566DM
INTEL/英特尔
880000
BGA
RU82566DM
INTEL/英特尔
70
BGA
RU82566DM
INTEL
33207
BGA
RU82566DM
INT
80000
RU82566DM
INTEL/英特尔
2366
BGA
RU82566DM
INTEL(英特尔)
4550
BGA
RU82566DM
INTEL
9000
BGA
RU82566DM
INTEL
80000
BGA
RU82566DM
INTEL
20000
BGA
RU82566DM
INTEL/英特尔
9852
BGA
RU82566DM
INTEL/英特尔
12580
BGA
RU8205G双N沟道(共漏)20V6ATSSOP-8场效应管(MOSFET) 双N沟道(共漏)漏源电压(Vdss):20V连续漏极电流(Id):6A功率(Pd):1.5W导通电阻(RDS(on)@Vgs,Id):21mΩ@4.5V,6A阈值电压(Vgs(th)@Id):700mV@250uA栅极电荷(Qg@Vgs):10nC@4.5V输入电容(Ciss@Vds):580pF@1
发布时间:2022-11-23