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RMQSGA3636DGBA
文件大小:350 Kbytes
页数:30
品牌简称:RENESAS / 瑞萨
品牌全称:Renesas Technology Corp / 瑞萨科技有限公司
品牌Logo: RENESAS
品牌主页:www.renesas.com
功能描述:36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.0 Cycle Read latency)
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RMQSGA3636DGBA Features

Description

The RMQSGA3636DGBA is a 1,048,576-word by 36-bit and the RMQSGA3618DGBA is a 2,097,152-word by 18-bit

synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are

controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are

suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit

configuration. These products are packaged in 165-pin plastic FBGA package.

RMQSGA3636DGBA供应商库存(更新时间:2026-07-24 15:19)

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