DESCRIPTION

The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle .200 in diameter.

FEATURES

• No contact surface sensing

• Phototransistor output

• Focused for sensing specular reflection

• Daylight filter on photosensor

• Dust cover