Description
The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
• INTERNALLY MATCHED
• Guaranteed Performance at 2.17 GHz, 28 V
- Output Power = 50 Watts Min
- Gain = 11.0 dB Typ
- Efficiency = 35 Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100 Lot Traceability
PTF10122
ERICSSON/爱立信
244
PTF10122
ERICSSON
18800
TO-59.高频管
PTF10122
ERICSSON/爱立信
8510
TO-59
PTF10122
ERICSSON/爱立信
244
PTF10122
ERICSSON
18800
TO-59.高频管
PTF10122
ERICSSON/爱立信
8510
TO-59