Highlightsofourtunableprocessincludelowdarkcurrent,excellentCTE,andvery goodyield DALSASemiconductors150mmC252.5祄CCDprocessoffersburiedchannelorsurface channeloperationatupto15voltswitheithertwoorthreepolysiliconlayers.A modularprocessingapproachallowsourfoundrycustomerstoadjustprocessparameters forthemostdemandingrequirementsonCTE,chargestoragecapacityandlowdark current.Scannerphotolithographypermitsintegrationofwaferscaledevices.Weoffer advancedtechnologysuchasstitchingforlargedevicesandmore.