Description
The PD85025-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD85025-E’s superior linearity performance makes it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC European directive
参考价格:130.2256
型号:PD85025-E 品牌:STMicroelectronics 说明:PD85025-E多少钱,2026年最近一个月行情走势,PD85025-E批发/采购报价,PD85025-E行情走势销售排行榜,PD85025-E报价。
PD85025-E
ST/意法
32360
SMD
PD85025-E
ST(意法半导体)
7786
N/A
PD85025-E
ST
70000
N/A
PD85025-E
ST/意法
9850
SMD
PD85025-E
ST/意法
1566
SMD
PD85025-E
ST/意法半导体
20000
10RF-Formed-4
PD85025-E
ST/意法半导体
16900
10RF-Formed-4
PD85025-E
ST/意法半导体
8860
10RF-Formed-4
PD85025-E
ST/意法
1566
SMD
PD85025-E
ST-意法半导体
2368
SO-10RF
PD85025-E
ST/意法
1566
SMD
PD85025-E
ST/意法半导体
12820
10RF-Formed-4
PD85025-E
ST/意法
8510
TO-59
PD85025-E
ST/意法半导体
10000
10RF-Formed-4
PD85025-E
ST
100