NTMFS5830NLT1G
ON-安森美
78800
DFN-8.贴片
NTMFS5830NLT1G
ON-安森美
83500
QFN-8.贴片
NTMFS5830NLT1G
ON
80000
DFN-8
NTMFS5830NLT1G
ON(安森美)
7350
NA/
NTMFS5830NLT1G
ON
300
DFN-8
NTMFS5830NLT1G
ON
8800
DFN-8
NTMFS5830NLT1G
ON Semiconductor
9000
8PowerTDFN 5 Leads
NTMFS5830NLT1G
NK/南科功率
986966
DFN5X6
NTMFS5830NLT1G
ON/安森美
60000
QFN
NTMFS5830NLT1G
ON Semiconductor
9000
8PowerTDFN 5 Leads
NTMFS5830NLT1G
ON
3805
DFN-8
NTMFS5830NLT1G
ON/安森美
100500
QFN
NTMFS5830NLT1G
ON Semiconductor
8000
8PowerTDFN 5 Leads
NTMFS5830NLT1G
ON/安森美
3505
QFN
NTMFS5830NLT1G
ON
300
DFN-8
安森美半导体NTMFSC006N双路Cool™N通道功率MOSFET采用PowerTrench®工艺和双面冷却封装。
发布时间:2024-02-22