FEATURES
Supply Voltage +2.4 to +3.6V
Low Current Consumption 4μA (OPA,OPB)
150μA (ADC)
Low Noise Amplifier 1.3μVpp typ. (0.1 to 10Hz)
Low Offset Voltage Amplifier 300μV max.
RF immunity Amplifier
Programmable Cell Bias Voltage
OPA : 0.3V to 1.7V (7 steps)
OPB : 0.25V to 1.75V (50mV step)
Programmable Gain Pre-Amplifier 1V/V to 8V/V
High resolution Programmable Gain ADC
1V/V to 8V/V, 16-Bit (NFB), 32sps to 2k sps
System Calibration for offset & gain drift
Control external EEPROM as a Master device
Ambient Operating Temperature -40°C to +85°C
Interface I2C (3-Bit selectable slave address)
Package EQFN-24-LE (4mm x 4mm)
NJR Corporation/NJRC
25000
24-WFQFN 裸露焊盘
NJR Corporation/NJRC
9000
24EQFN
Nisshinbo
8650
EQFN-24(4x4)
NJR/NJRC
7800
电联咨询
NJR Corporation/NJRC
35200
24-EQFN (4x4)
NJR-日本无线
6328
24-EQFN
NJR Corporation/NJRC
9000
24EQFN
Nisshinbo Micro Devices Inc.
60000
24-EQFN(4x4)
NJR
932
24-EQFN