DESCRIPTION:
The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes state-of-the-art diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions.
Features
• 30 MHz
• 12.5 VOLTS
• POUT = 100 WATTS
• GPE = 12.0 dB MINIMUM
• IMD = –30 dBc
• GOLD METALLIZATION
• COMMON EMITTER CONFIGURATION
MS1051
66880
MS1051
APT
8510
TO-59
MS1051
Relmon/瑞盟
5000
LQFP48
APT
294
MS1051
MSC
1
SMD
MS1051
66880
MS1051
APT
8510
TO-59
MS1051
Relmon/瑞盟
5000
LQFP48
MS1051
TOSHIBA/东芝
241
TO-59
MS1051
MSC
1
SMD