DESCRIPTION
The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power P1dB = 32W (TYP.) @ f=3.6 - 4.2 GHz
High power gain GLP = 11 dB (TYP.) @ f=3.6 - 4.2GHz
High power added efficiency P.A.E. = 36 (TYP.) @ f=3.6 - 4.2GHz
Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
APPLICATION
item 01 : 3.6 - 4.2 GHz band power amplifier
item 51 : 3.6 - 4.2 GHz band digital radio communication
MGFC45V3642A
QORVO
5000
SMD
MGFC45V3642A
三菱
18800
TO-59.高频管
MGFC45V3642A
MITSUBISHI/三菱
260
MGFC45V3642A
QORVO
5000
SMD
MGFC45V3642A
三菱
18800
TO-59.高频管
MGFC45V3642A
MITSUBISHI/三菱
260
827534-1 284087-1 1-368088-1 1-1393258-7 4-1419108-0 DF11-10DEP-2C 105308-1210 46992-0410 DF63-3S-3.96C 1-1419108-7 1393219-3 3-1419108-1 4-1393144-1 61202-1 640923-1 IM46TS V23101D 7B201 1-966701-1 90120-0124 1-967067-1 87760-1416 RT334012 151049-2201 3-
发布时间:2022-08-12