DESCRIPTION
The MGFC41V3642 is an internally impedence matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high raliability.
FEATURES
Internally matched to 50ohm system
High output power
P1dB = 14W (TIP.) @ f=3.6 - 4.2 Hz
High power gain
GLP = 12.5 dB (TYP.) @ f=3.6 - 4.2 GHz
High power added efficiency
Eadd = 40 (TYP.) @ f=3.6 - 4.2 GHz
Low Distortion[Item-51]
IM3=-45 dBc(TYP.)@Po=30dBm S.C.L.
APPLICATION
item 01 : 3.6 - 4.2 GHz band power amplifier
item 51 : 3.6 - 4.2 GHz band digital radio communication
MGFC41V3642
MITSUBISHI/三菱
13000
TO-59
MGFC41V3642
MITSUBISHI/三菱
8510
TO-59
MGFC41V3642
MITSUBISHI/三菱
260
MGFC41V3642
MITSUBISH
5000
SMD
MGFC41V3642
三菱
18800
TO-59.高频管
MGFC41V3642
MITSUBISHI/三菱
13000
TO-59
MGFC41V3642
MITSUBISHI/三菱
8510
TO-59
MGFC41V3642
MITSUBISHI/三菱
260
MGFC41V3642
MITSUBISH
5000
SMD
MGFC41V3642
三菱
18800
TO-59.高频管
827534-1 284087-1 1-368088-1 1-1393258-7 4-1419108-0 DF11-10DEP-2C 105308-1210 46992-0410 DF63-3S-3.96C 1-1419108-7 1393219-3 3-1419108-1 4-1393144-1 61202-1 640923-1 IM46TS V23101D 7B201 1-966701-1 90120-0124 1-967067-1 87760-1416 RT334012 151049-2201 3-
发布时间:2022-08-12