FEATURES
Metal-semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
ON/安森美
6540
DFN5
ON
3000
D0-201AD
ON/安森美
8080
SO-8FL
ON(安森美)
6000
SO-8FL
ON/安森美
9850
DFN
MOT
5
ON-安森美
9328
DFN-5.贴片
ON-安森美
57500
SOD-123
ON/安森美
5400
QFN
ON
1500
DFN
DIODES/美台
12730
NA
ON(安森美)
66688
DO-201AD
ON
6000
DIODES-美台
36218
DO-27
ON(安森美)
5000
标准封装
MBR20200CTG MBRB20200CT 丝印B20200G 肖特基二极管 原装现货
发布时间:2024-06-06