SUMMARY DESCRIPTION
The M58LW032D is a 32 Mbit (4Mb x 8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply.
FEATURES SUMMARY
■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH
■ SUPPLY VOLTAGE
– VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations
■ ACCESS TIME
– Random Read 90ns,110ns
– Page Mode Read 90ns/25ns, 110ns/25ns
■ PROGRAMMING TIME
– 16 Word Write Buffer
– 12µs Word effective programming time
■ 32 UNIFORM 64 KWord/128KByte MEMORY BLOCKS
■ ENHANCED SECURITY
– Block Protection/ Unprotection
– VPEN signal for Program Erase Enable
– 128 bit Protection Register with 64 bit Unique Code in OTP area
■ PROGRAM and ERASE SUSPEND
■ 128 bit PROTECTION REGISTER
■ COMMON FLASH INTERFACE
■ 100, 000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code M58LW032D: 0016h
■ PACKAGES
– Compliant with Lead-Free Soldering Processes
– Lead-Free Versions
RENESAS
2500
BGA
STM
6000
BGA
ST
16900
BGA
-
10000
NA
ST
20000
BGA
ST
2789
BGA
ST
360
BGA
ST/意法
3000
BGA
ST/意法
30000
N
STMicroelectronics
18500
ST
68500
BGA
ST
8560
BGA
STMicroelect
4500
FBGA
ST
9000
64TBGA
ST
60000
BGA