1 Features

• 100V GaN power stage with integrated driver: (GaN FET RDS(ON) options: 1.1mΩ and 1.7mΩ)

• Integrated high-side level shift and bootstrap

– Two LMG310xR0xx can form a half-bridge

– No external level shifter is required

• Efficient and high-density power conversion with

– Ultra-low propagation delay (20ns) and matching (7ns)

– Independent turn-on and turn-off slew-rate control for the GaN FET

– Zero-voltage detection (ZVD) reporting for dead-time optimization

– Ideal diode mode turn-on (IDM) and turn-off (zero current detection ZCD) to reduce third quadrant losses in soft switching application

• Input control flexibility

– Independent input mode (IIM) control

– Single PWM input with resistor programmable dead time option for IO-limited controllers

• Robust protection

– Interlock protection in IIM (LMG3104R0xx)

– Internal bootstrap supply voltage regulation to prevent GaN FET overdrive

– VDS monitoring based cycle-by-cycle shortcircuit protection

– Fault indication for overtemperature, supply undervoltage, and short-circuit events

• External bias power supply: 5V

– Supports 3.3V and 5V input logic levels

• Parasitic optimized QFN package with exposed top pad to support top-side cooling