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K4H510838M-TCB0
文件大小:653 Kbytes
页数:53
品牌简称:SAMSUNG / 三星
品牌全称:Samsung semiconductor / 三星半导体
品牌Logo: SAMSUNG
品牌主页:www.samsung.com.cn
功能描述:128Mb DDR SDRAM
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K4H510838M-TCB0 Features

Features

• Double-data-rate architecture; two data transfers per clock cycle

• Bidirectional data strobe(DQS)

• Four banks operation

• Differential clock inputs(CK and CK)

• DLL aligns DQ and DQS transition with CK transition

• MRS cycle with address key programs

-. Read latency 2, 2.5 (clock)

-. Burst length (2, 4, 8)

-. Burst type (sequential & interleave)

• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)

• Data I/O transactions on both edges of data strobe

• Edge aligned data output, center aligned data input

• LDM,UDM/DM for write masking only

• Auto & Self refresh

• 15.6us refresh interval(4K/64ms refresh)

• Maximum burst refresh cycle : 8

• 66pin TSOP II package

K4H510838M-TCB0供应商库存(更新时间:2026-08-22 18:08)

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