Features
• Low on-resistance
RDS(on)= 6 mΩtyp.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
K3069
RENESAS/瑞萨
38
TO-220
K3069
HITACHI/日立
10000
TO-220
K3069
HIT
8000
TO-220
K3069
HIT
7000
TO-220
K3069
-
13000
NA
K3069
NEC
6000
TO-220
K3069
RENESAS/瑞萨
50000
TO-220