Description
Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL3103L) is available for low profile applications.
● Advanced Process Technology
● Surface Mount (IRL3103S)
● Low-profile through-hole (IRL3103L)
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
IRL3103SPBF
IR
663300
TO-263
IRL3103SPBF
IR
11846
TO-263
IRL3103SPBF
IR原装
22918
TO-263
IRL3103SPBF
IR
80000
TO-263
IRL3103SPBF
IR
320
TO-263
IRL3103SPBF
IR
20000
SOT263
IRL3103SPBF
ir
500000
IRL3103SPBF
IR
20000
D2-pak
IRL3103SPBF
IR
10000
TO-263
IRL3103SPBF
IR
890000
PLCC44L
IRL3103SPBF
VISHAY-威世
78800
TO-263-3
IRL3103SPBF
IR
6200
TO-263
IRL3103SPBF
IR
20862
TO-263
IRL3103SPBF
Infineon Technologies
9000
TO2633 D2Pak (2 Leads + Tab) T
IRL3103SPBF
IR
1983
IRFS4227TRLPBF 为知名半导体品牌出品的 N 沟道 MOS 管,导通损耗低,载流能力出色,开关运行稳定,散热表现良好,常应用在直流电源转换
发布时间:2026-05-27