FEATURES
• Low RDS(on)
• Improved inductive ruggedness
• Fast switching times
• Rugged polysilicon gate cell structure
• Low input capacitance
• Extended safe operating area
• Improved high temperature reliablility
IRFP9141
HARRIS哈里斯
890000
管3P
IRFP9141
HARRIS
5000
TO-3P
IR
8000
TO-247
IR
7000
TO-247
IR
6000
TO-247
IRFP9141
HARRIS哈里斯
890000
管3P
IRFP9141
HARRIS
5000
TO-3P