Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features

• 0.4A, 400V

• rDS(ON) = 3.600Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

参考价格：4.2422

型号：IRFD310PBF 品牌：Vishay 说明：IRFD310PBF多少钱，2026年最近一个月行情走势，IRFD310PBF批发/采购报价，IRFD310PBF行情走势销售排行榜，IRFD310PBF报价。