FEATURES
• Low Rds(on) ) at high voltage
• Improved Inductive ruggedness
• Excellent high voltage stability
• Fast switching times
• Rugged polysillcon gate cell structure
• Low Input capacitance
• Extended safe operating area
• Improved high temperature reliability
• TO-3 package (High voltage)
IRF251
IR
10000
TO-3
IRF251
MOTOROLA
50301
TO-3
IRF251
MOT
1088
原厂原装
IRF251
IR
19889
TO-3(铁帽)
IRF251
IR
8000
TO-3
IRF251
IR
7000
TO-3
IRF251
IR
6000
TO-3