Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.
● Low RDS(on)
● VQS Rated at ±20 V
● Silicon Gate for Fast Switching Speeds
● oss. vos(on), Specified at Elevated Temperature
● Rugged
● Low Drive Requirements
● Ease of Paralleling
IRF231
IR
52726
TO-3
IRF231
82000
N/A
IRF231
IR
67500
TO-3
IRF231
IR
67500
TO-3
IRF231
IR
8630
CAN
IRF231
IR
19889
TO-3(铁帽)
IRF231
IR
7000
TO-3
IRF231
MOT
52
IRF231
IR
10000
TO-3
IRF231
IR
8000
TO-3
IRF231
IR
6000
TO-3