These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Features

• 56A, 100V

• Simulation Models

- Temperature Compensated PSPICE® and SABER™

Electrical Models

- Spice and Saber Thermal Impedance Models

- www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

参考价格：7.7131

型号：HUF75639S3 品牌：Fairchild 说明：HUF75639S3多少钱，2026年最近一个月行情走势，HUF75639S3批发/采购报价，HUF75639S3行情走势销售排行榜，HUF75639S3报价。