Features
• Electrically screened to DLA SMD# 5962-99560
• QML qualified per MIL-PRF-38535 requirements
• Latch-up immune
• Radiation acceptance testing - HS-4424DRH
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)
• Radiation acceptance testing - HS-4424DEH
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)*
*Limit established by characterization
• IPEAK. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (minimum)
• Matched rise and fall times (CL = 4300pF). . 75ns (maximum)
• Low voltage lockout feature . . . . . . . . . . . . . . . . . . . . . . . . <8V
• Wide supply voltage range . . . . . . . . . . . . . . . . . . . . 8V to 18V
• Propagation delay . . . . . . . . . . . . . . . . . . . .250ns (maximum)
• Consistent delay times with VCC changes
• Low power consumption
- 40mW with inputs high
- 20mW with inputs low
• Low equivalent input capacitance . . . . . . . . . . 3.2pF (typical)
• ESD protected. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >4kV
TE/泰科
10000
HARR
10
H-SUN(华芯微)
8020
SOT-23-6
ACX/璟德
6540
SMD
TE/泰科
287692
/
CAPXON
20000
DIPSMD
RICHCO
100500
SMD
HOMSEMI
6800
TO-220
HOMSEMI
2000
TO-220
HOMSEMI
90000
TO-220
HOMSEMI
50000
TO-220
HOMSEMI
50000
TO-220