FEATURES
❐ Originative New Design
❐ Superior Avalanche Rugged Technology
❐ Robust Gate Oxide Technology
❐ Very Low Intrinsic Capacitances
❐ Excellent Switching Characteristics
❐ Unrivalled Gate Charge : 18 nC (Typ.)
❐ Extended Safe Operating Area
❐ Lower RDS(ON) : 0.8 Ω (Typ.) @VGS=10V
❐ 100 Avalanche Tested
HFP730
VBSEMI/台湾微碧
10026
TO220
HFP730
SEMIHOW
6800
TO-220
HFP730
SEMIHOW
50000
TO-220
HFP730
VBSEMI/台湾微碧
90000
TO220
HFP730
VBSEMI/台湾微碧
50000
TO220