Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance RDS(on) = 4.5 mΩ typ. (at VGS = 10 V)
RENESAS/瑞萨
20000
SOT-669
RENESAS
1000
SOT669
RENESAS
482
SOT669
RENESAS/瑞萨
6895
SOT669
Renesas
9000
SC100 SOT669
RENESAS/瑞萨
295
SOT669
RENESAS
30000
SOT-669
RENESAS/瑞萨
880000
LFPAK
RENESAS/瑞萨
2650
5-LFPAK
SOT-669
15659
NA
MICROCHIP/美国微芯
30000
SOT-669
RENESAS
68500
TO252-4
RENESAS/瑞萨
9850
SOT669
RENESAS
65480
SOT669
RENESAS/瑞萨
8000
LFPAK