Description

The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high

electron mobility transistor (HEMT) for use in multistandard cellular power amplifier applications. It features

input matching, high efficiency, and a thermally-enhanced

package with earless flange.

Features

• GaN on SiC HEMT technology

• Input matched

• Typical Pulsed CW performance, 2690 MHz, 48 V,

combined outputs

- Output power at P3dB = 370 W

- Efficiency = 70

- Gain = 15 dB

• Capable of handling 10:1 VSWR @48 V, 56 W (CW)

output power

• Human Body Model class 1A (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant