The GP800FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry.
FEATURES
■ n - Channel
■ Enhancement Mode
■ High Input Impedance
■ Optimised For High Power High Frequency Operation
■ Isolated Base
■ Full 1200V Capability
■ 800A Per Module
APPLICATIONS
■ High Power Switching
■ Motor Control
■ Inverters
■ Traction Systems
NK
18800
TO-252-3
DIODES/美台
500000
N/A
Guestgood(客益)
8347
SOP8
N/A
80000
GENERALINSTRUMENTS
100500
NA
Diodes(美台)
500000
封装
IR
7000
TO-220-2
GUEST
20000
sop8
JJM
5250
TO-247J-2L
GUEST
6895
SOP-8
LINEARIN/先积
66000
原封装
GUESTGOOD客益
20510
SOP8
JJW
20000
TO-247J-2L
IR
6000
TO-220-2
IR
6000
TO-220-2