600mA Silicon NPN Epitaxial Planar Transistor
Features
• High collector-emitterbreakdien voltage.
(BVCEO = 40V@IC =10mA)
• Small load switch transistor with high gain and low
stauration voltage, is designed for general purpose
amflifier and switching applications at collector current.
• Capable of 225mW power dissipation.
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
• Suffix -H indicates Halogen-free part, ex.FMBT2222-H.
FUJITSU/富士通
988
LCC
FUJITSU
20000
LCC
Phoenix/菲尼克斯
4611
1821151
FUJITSU
5000
LCC
SOT-23
15659
NA
FUJITSU
16000
SMD
FUJITSU
38992
LCC
FUJITSU/富士通
10000
SMD
原厂
600
模块
FORMOSA
8850
SOT-23
FUJISTU
500
高频管
FUJITSU
1000
SMD
FCT
500
FMS/美丽微
45000
SOT-23-3L
ZETEX
15000
SOT23-3