Features:
• Temperature Compensated
GaAs FET Amplifier Design
with Integrated Heatsink
• Frequency Range 2 GHz to 8 GHz
• PIN Diode Compensation
Circuitry
• Small Signal Gain 39 dB typ
• Operational Temperature
Range -55°C to +85°C
• Noise Figure 3.8 dB typ
• Output P1dB +22 dBm typ
• VSWR 1.4:1 typ
• DC Voltage +12 to +15 Vdc
• DC Current 350 mA
• SMA Female Connectors
• Rugged Mil Grade Aluminum
Package Design
• Designed to meet MIL-STD-202
environmental test conditions
BITEK/硕颉
6540
DIP
PARTRON
880000
NA
FUJITSU-富士通
78800
TO-263-3
ASI
8510
TO-59
ROHS
56520
ROHS
RICHCO
100500
SMD
ASI
193
FUJI/富士电机
9000
TO-220
FUJI/富士电机
50000
TO-263
HONEYWELL
10000
con
ADI
25000
原厂封装
原厂
600
模块
PARTRON
10000
65000
N/A
FM/富满
10000
TO-220