TI1
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
CSD17304Q3MOS(场效应管)
TI/德州仪器
60000
QFN
24+
CSD17304Q3MOS(场效应管)
TI/德州仪器
50000
QFN
23+
全新原装正品现货,支持订货
CSD17304Q3MOS(场效应管)
TI/德州仪器
12000
QFN
23+
CSD17304Q3MOS(场效应管)
TI/德州仪器
60000
QFN
24+
CSD17304Q3MOS(场效应管)
TI/德州仪器
50000
QFN
23+
全新原装正品现货,支持订货