Description

The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC) on a Silicon Carbide (SiC) substrate, using a 0.25μm gate

length fabrication process. The semiconductor offers 25 Watts of

power from 6 to 12 GHz of instantaneous bandwidth. The GaN HEMT

MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm

metal/ceramic flanged package. It offers high gain and superior

efficiency in a small footprint package at 50 ohms.

Features

• 34 dB Small Signal Gain

• 40 W Typical PSAT

• Operation up to 28 V

• High Breakdown Voltage

• High Temperature Operation

• Size 0.172 x 0.239 x 0.004 inches

Applications

• Jamming Amplifiers

• Test Equipment Amplifiers

• Broadband Amplifiers