Description
The circuit is a two-stages self biased wide band monolithic low noise amplifier.
The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.
Main Feature
■< Broad band performance 20-30GHz
■< 2.2dB noise figure
■< 15dB gain, ± 0.5dB gain flatness
■< Low DC power consumption, 50mA
■< 20dBm 3rd order intercept point
■
UMS
90000
N/A
NCC/黑金刚
50000
UMS
10000
die
UMS
1680
SMD
5500
SMD
UMS
7560
N/A
UMS
100
NA
Alphasense英国阿尔法
6400
传感器
BOTHHAND-帛汉
3280
车规-电源模块
UMS
18800
车规-射频微波
UMS UNITED MONOLITHIC SEMICOND
880000
SMD
UMS
3000
N/A
UMS
85
QFN
UMS
39500
NA